GT10Q301 2002-10-29 1 toshiba insulated gate bipolar transistor silicon n channel igbt GT10Q301 high power switching applications motor control applications the 3rd generation enhancement-mode high speed: t f = 0.32 s (max) low saturation voltage: v ce (sat) = 2.7 v (max) frd included between emitter and collector maximum ratings (ta = 25c) characteristics symbol rating unit collector-emitter voltage v ces 1200 v gate-emitter voltage v ges 20 v dc i c 10 collector current 1 ms i cp 20 a dc i f 10 emitter-collector forward current 1 ms i fm 20 a collector power dissipation (tc = 25c) p c 140 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c equivalent circuit unit: mm jedec D jeita D toshiba 2-16c1c weight: 4.6 g (typ.) gate emitter collector
GT10Q301 2002-10-29 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i ges v ge = 20 v, v ce = 0 D D 500 na collector cut-off current i ces v ce = 1200 v, v ge = 0 D D 1.0 ma gate-emitter cut-off voltage v ge (off) i c = 1 ma, v ce = 5 v 4.0 D 7.0 v collector-emitter saturation voltage v ce (sat) i c = 10 a, v ge = 15 v D 2.1 2.7 v input capacitance c ies v ce = 50 v, v ge = 0, f = 1 mhz D 600 D pf rise time t r D 0.07 D turn-on time t on D 0.30 D fall time t f D 0.16 0.32 switching time turn-off time t off inductive load v cc = 600 v, i c = 10 a v gg = 15 v, r g = 75 ? (note) D 0.50 D s peak forward voltage v f i f = 10 a, v ge = 0 D D 3.0 v reverse recovery time t rr i f = 10 a, di/dt = ? 200 a/s D D 350 ns thermal resistance (igbt) r th (j-c) D D D 0.89 c/w thermal resistance (diode) r th (j-c) D D D 1.79 c/w note: switching time measurement circuit and input/output waveforms 10% 90% v ge v ce i c t d (off) t off t d (on) t r 0 t f 10% 10% 10% 90% 10% 90% t on 0 r g i c v ce l ? v ge r g v cc
GT10Q301 2002-10-29 3 gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) ) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) i c ? v ge collector current i c (a) case temperature tc (c) v ce (sat) ? tc collector-emitter saturation voltage v ce (sat) (v) 0 0 15 v ge = 10 v common emitter tc = 25c 12 13 4 8 12 16 20 1 2 3 4 5 20 0 0 common emitter tc = ? 40c 4 8 12 16 20 4 8 12 16 20 i c = 4 a 10 20 0 0 common emitter tc = 25c 4 8 12 16 20 4 8 12 16 20 20 i c = 4 a 10 0 0 common emitter tc = 125c 4 8 12 16 20 4 8 12 16 20 20 i c = 4 a 10 0 0 common emitter v ce = 5 v 4 8 12 16 20 4 8 12 16 20 25 ? 40 tc = 125c 0 ? 60 common emitter v ge = 15 v 1 2 3 4 ? 20 20 60 100 140 20 i c = 4 a 10
GT10Q301 2002-10-29 4 gate resistance r g ( ? ) switching time t off , t f ? r g switching time t off , t f (s) collector current i c (a) switching time t off , t f ? i c switching time t off , t f (s) collector current i c (a) switching loss e on , e off ? i c switching loss e on , e off (mj) gate resistance r g ( ? ) switching loss e on , e off ? r g switching loss e on , e off (mj) gate resistance r g ( ? ) switching time t on , t r (s) collector current i c (a) switching time t on , t r ? i c switching time t on , t r (s) 0.01 3 5 10 30 50 100 300 500 0.03 0.05 0.1 0.3 0.5 1 common emitter v cc = 600 v v gg = 15 v i c = 10 a : tc = 25c : tc = 125c t on t r 0.01 0 2 4 6 8 10 12 0.03 0.1 0.3 1 common emitter v cc = 600 v v gg = 15 v r g = 75 ? : tc = 25c : tc = 125c t on t r 0.1 3 5 10 30 50 100 300 500 0.3 0.5 1 3 5 10 common emitter v cc = 600 v v gg = 15 v i c = 10 a : tc = 25c : tc = 125c e of f e on 0.05 0 2 4 6 8 10 12 0.1 0.3 1 3 common emitter v cc = 600 v v gg = 15 v r g = 75 ? : tc = 25c : tc = 125c t of f t f switching time t on , t r ? r g 0.01 0 2 4 6 8 10 12 0.03 0.1 0.3 1 3 10 common emitter v cc = 600 v v gg = 15 v r g = 75 ? : tc = 25c : tc = 125c e on e of f 0.05 3 5 10 30 50 100 300 500 0.1 0.3 0.5 1 3 0.03 common emitter v cc = 600 v v gg = 15 v i c = 10 a : tc = 25c : tc = 125c t of f t f
GT10Q301 2002-10-29 5 forward voltage v f (v) i f ? v f forward current i f (a) reverse recovery time t rr (ns) forward current i f (a) t rr , i rr ? i f reverse recovery current i rr (a) ) collector-emitter voltage v ce (v) c ? v ce capacitance c (pf) gate-emitter voltage v ge (v) gate charge q g (nc) v ce , v ge ? q g collector-emitter voltage v ce (v) collector-emitter voltage v ce (v) safe operating area collector current i c (a) collector-emitter voltage v ce (v) reverse bias soa collector current i c (a) 0 0 0 common emitter r l = 60 ? tc = 2 5 c 200 400 600 800 1000 20 40 60 80 100 400 4 8 12 16 20 v ce = 200 v 600 10 1 0 3 10 30 100 2 4 6 8 10 t r r common collector di/dt = ? 200 a/s v ge = 0 : tc = 25c : tc = 125c i r r 12 100 1000 0 0 common collector v ge = 0 4 8 12 16 20 1 2 3 4 5 ? 40 tc= 125c 25 1 0.1 0.3 1 5 30 100 3 30 100 1000 3000 0.5 3 10 50 10 300 * : single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. 10 ms * 100 s * i c max (pulsed) * i c max (continuous) 1 ms * dc operation 50 s * 1 0.1 0.3 1 5 30 100 3 30 100 1000 3000 0.5 3 10 50 10 300 t j 125c v ge = 15 v r g = 43 ? c res 0.1 c ies 3 10 30 100 3000 0.3 3 30 1000 300 1000 1 10 100 common emitter v ge = 0 f = 1 mhz tc = 25c c oes 1 300
GT10Q301 2002-10-29 6 pulse width t w (s) transient thermal impedance r th (t) (c/w) r th (t) ? t w 10 ? 3 10 2 10 ? 5 10 ? 4 10 ? 3 10 ? 2 10 ? 1 10 0 10 1 10 2 10 ? 2 10 ? 1 10 0 10 1 10 ? 4 tc = 25c diode stage igbt stage
GT10Q301 2002-10-29 7 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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